It is now well known that testing for CDM Electrostatic Discharge [ESD]
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
" href="https://incompliancemag.com/terms/electrostatic-discharge/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">ESD evaluation is becoming a bigger challenge. Previously (In Compliance Magazine, March 2021), capacitively coupled TLP (CCTLP) was described as an alternate approach. It offers many advantages compared to the standardized field-induced CDM setup according to the JS002 standard [1]. Testing of a package, bare die, or wafer is enabled with high reproducibility. The failure correlation between CDM and CCTLP has been investigated based on peak current stress levels and not by a charging voltage level [2]. If testing with an alternative CDM method as CCTLP is done to reproduce JS002, the CDM charging voltage must be transferred into peak current levels.
A measure for the severity of the CDM stress is the effective Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance Ceff of a device [3]. Ceff characterizes the amount of exchanged charge between DUT and test setup at a specific stress level (e.g., VCDM) in a specific testing environment.
Products can be categorized with respect to Ceff in an FICDM setup because of the direct relation to the peak current for a given test voltage, as described in [4].
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance values play a role according to the three-capacitances model, as shown in Figure 1.
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance CDUT is defined as the Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance from the device to the field plane. The static Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance value for CDUT is extracted from a Finite Element Method [FEM]
A technique for finding approximate solutions to boundary value problems for differential equations.
" href="https://incompliancemag.com/terms/finite-element-method/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">Finite Element Method (Finite Element Method [FEM]
A technique for finding approximate solutions to boundary value problems for differential equations.
" href="https://incompliancemag.com/terms/finite-element-method/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">FEM) simulation according to the three-capacitances model shown in Figure 1. Differences between Ceff and CDUT capacitances either extracted from FEM-simulation or calculated as parallel plate Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance Cplate (A is the area of the DUT, and d is the thickness of the FR4 dielectric layer) are demonstrated based on the metallic circular coin modules (height 1.27 mm, diameters see Table 1).
A technique for finding approximate solutions to boundary value problems for differential equations.
" href="https://incompliancemag.com/terms/finite-element-method/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">FEM simulation of CDUT does not coincide with the simple plate Capacitor
A passive electronic component that consists of two conductive plates separated by an insulating dielectric.
" href="https://incompliancemag.com/terms/capacitor/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitor formula since fringing effects are also considered, especially for small devices. CDUT also shows a linear dependency on the area-capacitance relation. In contrast, Ceff values show saturation with increasing area or volume of a DUT. As a result, not only the area of the bottom surface contributes to the Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance but also the sidewalls and, therefore, the volume.
To calculate the CDM discharge current from the volume, the device area is considered as the maximum edge length a x b, including the pins and mold compound (Figure 3). For a bare die product that does not go into a final package, the area is calculated from the edge length of the silicon accordingly.
器件尺寸的影响为了根据体积计算 CDM 放电电流，器件面积被视为最大边缘长度 a x b，包括引脚和模塑料（图 3）。对于不进入最终封装的裸芯片产品，面积是根据硅的边缘长度相应计算的。
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Statistical analysis of CDM testing data shows the relevance of device area and volume for predicting stress current levels in a CDM test since the height h of the device has a non-neglectable influence on the discharge current. A database with over 15 million CDM waveforms has been used to evaluate the relation between area, volume, peak current, and the effective Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance Ceff. The area and volume of about 10000 different device types can be derived from the package dimensions included in the database. For each device type, only the waveforms are evaluated, showing the maximum positive peak current Ipeak out of several CDM discharges for a positive charging voltage level of 500 V. According to the measurement results, the peak current reduces with the increasing height of the device.
- 来自我们的赞助商 - 图 3：设备面积 A=a x b 和体积 V=A x h 的定义 CDM 测试数据的统计分析显示了设备面积和体积对于预测自高度 h 以来 CDM 测试中的应力电流水平的相关性器件的性能对放电电流有着不可忽视的影响。拥有超过 1500 万个 CDM 波形的数据库已用于评估面积、体积、峰值电流和有效电容 Ceff 之间的关系。大约 10000 种不同设备类型的面积和体积可以从数据库中包含的封装尺寸得出。对于每种设备类型，仅评估波形，显示在 500 V 正充电电压水平下多次 CDM 放电的最大正峰值电流 Ipeak。根据测量结果，峰值电流随着设备高度的增加而减小。
This can be shown using the set of nine cylindrical solid metal coins P1 to P8 with different diameters and volumes (see Table 1)[5]. The coin reference for the peak current still gives a reasonable orientation for the maximum peak current. Figure 4 shows the dependency of the effective Capacitance
The ability of a a component or circuit to store an electric charge.
" href="https://incompliancemag.com/terms/capacitance/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">capacitance Ceff on the volume. For very flat packages, the limit of the coins is exceeded but still givesa meaningful value. The coin with the smallest volume and, therefore, lowest Ceff reaches the lowest peak current and vice versa. For devices, this means that their Ceff with the according current can be related to the current of the coins. As shown, the device height is becoming relevant for the estimation of the stress current level, therefore, the volume is introduced as the preferred parameter. Thus, the volume value can be used to estimate the expectable peak current with respect to the coin values as shown in Figure 5.
A practical solution is presented for the problem, how CDM targets can be translated to current test levels. CDM current test levels are important as they allow using alternative CDM testing methods, such as CCTLP. The first testing proposal is a simple approach, representing the worst case: Increase the CCTLP testing voltage until the peak current value is reached at the product pin given in Figure 5.
To avoid over-testing, these levels can be lowered based on the second proposal if details of the electrical properties on-package and on-chip are known. Ceff values can be predicted by Finite Element Method [FEM]
A technique for finding approximate solutions to boundary value problems for differential equations.
" href="https://incompliancemag.com/terms/finite-element-method/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">FEM simulation even before devices are available.
为了避免过度测试，如果封装上和芯片上的电气特性的详细信息已知，则可以根据第二个建议降低这些水平。即使在设备可用之前，也可以通过 FEM 模拟来预测 Ceff 值。
The full paper was published in [6].
论文全文发表于[6]。
References
American National Standards Institute [ANSI]
A private non-profit organization that oversees the development of voluntary consensus standards for products, services, processes, systems, and personnel in the United States.
" href="https://incompliancemag.com/terms/american-national-standards-institute/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">ANSI/JEDEC/ESDA, “Joint Standard for Electrostatic Discharge [ESD]
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
K. Esmark, R. Gaertner, S. Seidl, F. zur Nieden, H. Wolf and H. Gieser, “Using CC-TLP to get a CDM robustness value,” 2015 37th Electrical Overstress/Electrostatic Discharge [ESD]
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
" href="https://incompliancemag.com/terms/electrostatic-discharge/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">ESD), Anaheim, CA, USA, 2007, pp. 5A.1‑1‑5A.1-10.
N. Jack, B. Carn and J. Morris, “Toward Standardization of Low Impedance Contact CDM,” 2019 41st Annual EOS/Electrostatic Discharge [ESD]
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
" href="https://incompliancemag.com/terms/electrostatic-discharge/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">ESD), Riverside, CA, USA, 2019, pp. 1-7.
T. J. Maloney and N. Jack, “CDM Tester Properties as Deduced From Waveforms,” in Institute of Electrical and Electronics Engineers [IEEE]
A professional association that is dedicated to advancing technological innovation and excellence.
" href="https://incompliancemag.com/terms/institute-of-electrical-and-electronics-engineers/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">IEEE Transactions on Device and Materials Reliability, vol. 14, no. 3, pp. 792-800, Sept. 2014, doi: 10.1109/TDMR.2014.2316177
L. Zeitlhoefler, T. Lutz, F. Zur Nieden, K. Esmark and R. Gaertner, “Voltage to Current Correlation for CDM Testing,” 2023 45th Annual EOS/Electrostatic Discharge [ESD]
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
Sudden flow of electricity between two electrically charged objects caused by contact, an electrical short, or dielectric breakdown.
" href="https://incompliancemag.com/terms/electrostatic-discharge/" data-mobile-support="0" data-gt-translate-attributes='[{"attribute":"data-cmtooltip", "format":"html"}]' tabindex="0" role="link">ESD), Riverside, CA, USA, 2023, pp. 1-11, doi: 10.23919/EOS/ESD58195.2023.10287735
参考文献ANSI/JEDEC/ESDA，“静电放电灵敏度测试联合标准 - 带电设备模型”，JS-002，2018K。 Esmark、R. Gaertner、S. Seidl、F. zur Nieden、H. Wolf 和 H. Gieser，“使用 CC-TLP 获得 CDM 鲁棒性值”，2015 年第 37 届电气过应力/静电放电研讨会 (EOS/ESD)，美国内华达州里诺，2015 年，第 1-10.B 页。 C. Atwood、Y. Zhou、D. Clarke 和 T. Weyl，“大器件电容对 FICDM 峰值电流的影响”，2007 年第 29 届电气过应力/静电放电研讨会 (EOS/ESD)，美国加利福尼亚州阿纳海姆，2007 年，第 5A.1-1-5A.1-10.N 页。 Jack, B. Carn 和 J. Morris，“迈向低阻抗接触 CDM 的标准化”，2019 年第 41 届 EOS/ESD 研讨会 (EOS/ESD)，美国加利福尼亚州里弗赛德，2019 年，第 1-7.T 页。 J. Maloney 和 N. Jack，“从波形推论的 CDM 测试仪属性”，载于 IEEE 设备和材料可靠性交易，卷。 14、没有。 3，第 792-800 页，2014 年 9 月，doi：10.1109/TDMR.2014.2316177L。 Zeitlhoefler、T. Lutz、F. Zur Nieden、K. Esmark 和 R. Gaertner，“CDM 测试的电压与电流相关性”，2023 年第 45 届 EOS/ESD 研讨会 (EOS/ESD)，美国加利福尼亚州里弗赛德，2023 年，第 1-11 页，doi：10.23919/EOS/ESD58195.2023.10287735
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